SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To improve short-circuit resistance in an SiC semiconductor device.SOLUTION: An n-type source region 8 is configured by a first source region 8a with relatively low concentration, and a second source region 8b with higher concentration than the first source region 8a. Thereby, a saturation current v...

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Hauptverfasser:	TAKEUCHI YUICHI, YAMASHITA YUSUKE, KAJI AIKO, SUZUKI RYUTA, MINOTANI SHUHEI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Zusammenfassung:	To improve short-circuit resistance in an SiC semiconductor device.SOLUTION: An n-type source region 8 is configured by a first source region 8a with relatively low concentration, and a second source region 8b with higher concentration than the first source region 8a. Thereby, a saturation current value during a load short circuit can be reduced, and short-circuit resistance of an SiC semiconductor device can be improved.SELECTED DRAWING: Figure 1 【課題】ＳｉＣ半導体装置における短絡耐量の向上を図る。【解決手段】ｎ型ソース領域８を比較的低濃度とされた第１ソース領域８ａとそれよりも高濃度とされた第２ソース領域８ｂとによって構成する。これにより、負荷短絡時の飽和電流値を小さくすることが可能となり、ＳｉＣ半導体装置の短絡耐量を向上させることが可能となる。【選択図】図１