SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE
To provide a semiconductor light-emitting device capable of improving adhesion of an insulation layer to a semiconductor layer, while reducing resistance of a contact region at a semiconductor layer side, in a semiconductor light-emitting device having an ODR structure including the semiconductor la...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a semiconductor light-emitting device capable of improving adhesion of an insulation layer to a semiconductor layer, while reducing resistance of a contact region at a semiconductor layer side, in a semiconductor light-emitting device having an ODR structure including the semiconductor layer, and a metal layer electrically connected with the semiconductor layer via a contact part in a through hole of the insulation layer.SOLUTION: A semiconductor light-emitting device 1 includes a group III-V semiconductor structure 6 having a p-type contact layer 15 composed of an AlGaAs (0≤x |
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