DICING TAPE, DICING DIE-BONDING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To provide a dicing tape, a dicing die-bonding film (DDAF) and a method for manufacturing a semiconductor device which are suitable for satisfactory cleavage of a DAF on the dicing tape and suitable for suppressing the float-up or delamination of chips from the dicing tape in an expanding step which...

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Bibliographische Detailangaben
Hauptverfasser: MIZOBATA KAORI, ONISHI KENJI, SUGIMURA TOSHIMASA, TAKAMOTO HISAHIDE, AKAZAWA MITSUHARU, KOSAKA NAOFUMI, KIMURA TAKEHIRO, TSURUSAWA TOSHIHIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a dicing tape, a dicing die-bonding film (DDAF) and a method for manufacturing a semiconductor device which are suitable for satisfactory cleavage of a DAF on the dicing tape and suitable for suppressing the float-up or delamination of chips from the dicing tape in an expanding step which is to be performed with a DDAF for obtaining die-bonding film(DAF)-attached semiconductor chips.SOLUTION: A dicing tape 10 of the present invention is arranged to show a tensile stress in a range of 15-32 MPa with at least some distortion values in a range of 5-30% in a tensile test (a test piece of 20 mm in width, and an initial inter-chuck distance of 100 mm). A DDAF of the invention comprises: the dicing tape 10; and a DAF 20 on its sticker layer 12. A method for manufacturing a semiconductor device according to the invention comprises the steps of: sticking a semiconductor wafer or a split body thereof to the DDAF on a side of the DAF 20 together; and then expanding the dicing tape 10 in such a condition that a tensile stress in a range of 15-32 MPa is caused.SELECTED DRAWING: Figure 1 【課題】ダイボンドフィルム(DAF)付き半導体チップを得るためにダイシングダイボンドフィルム(DDAF)を使用して行うエキスパンド工程でダイシングテープ上のDAFにつき良好に割断させると共にダイシングテープからの浮きや剥離を抑制するのに適したダイシングテープ、DDAF、および半導体装置製造方法を提供する。【解決手段】本発明のダイシングテープ10は、引張試験(試験片幅20mm,初期チャック間距離100mm)にて、5〜30%の範囲の少なくとも一部の歪み値で15〜32MPaの範囲内の引張応力を示し得る。本発明のDDAFは、ダイシングテープ10とその粘着剤層12上のDAF20とを含む。本発明の半導体装置製造方法は、DDAFのDAF20側に半導体ウエハまたはその分割体を貼り合せた後、15〜32MPaの範囲内の引張応力が生ずる条件でダイシングテープ10をエキスパンドする工程を含む。【選択図】図1