SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS

To make it possible to suppress a dark current generated at a bottom of an element isolation region.SOLUTION: The solid-state imaging apparatus includes: an STI that separates a pixel transistor formed at a substrate interface of a semiconductor substrate; an N type layer formed at a position deeper...

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1. Verfasser:	KUDO YOSHIHARU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Zusammenfassung:	To make it possible to suppress a dark current generated at a bottom of an element isolation region.SOLUTION: The solid-state imaging apparatus includes: an STI that separates a pixel transistor formed at a substrate interface of a semiconductor substrate; an N type layer formed at a position deeper than the substrate interface; and an N type layer of the same conductivity type as the N type layer between the STI and the N type layer. The present technology can be applied to, for example, a rear-illuminated solid-state imaging apparatus or the like.SELECTED DRAWING: Figure 3 【課題】素子分離領域の底部で発生する暗電流を抑制することができるようにする。【解決手段】固体撮像装置は、半導体基板の基板界面に形成された画素トランジスタを分離するSTIと、基板界面よりも深い位置に形成されたN型層と、STIとN型層との間に、N型層と同じ導電型のN型層とを備える。本技術は、例えば、裏面照射型の固体撮像装置等に適用できる。【選択図】図３