ETCHING METHOD

To provide an etching method by which a silicon nitride film can be etched at a higher selectivity than those for a silicon oxide film, a silicon and a silicon germanium.SOLUTION: An etching method comprises the steps of: disposing, in a chamber, a substrate to be processed, having a silicon nitride...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	OZAWA TOSHIE, NAKAHATA KENICHI, ASAHI KENSHIRO, ABE TAKUYA, NAKAGOME TAKESHI, TODA SATOSHI, HUANG TSUHUNG, SASAHARA REIKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide an etching method by which a silicon nitride film can be etched at a higher selectivity than those for a silicon oxide film, a silicon and a silicon germanium.SOLUTION: An etching method comprises the steps of: disposing, in a chamber, a substrate to be processed, having a silicon nitride film, a silicon oxide film, and silicon and silicon germanium; making a pressure in the chamber 1333 Pa or more; and supplying a hydrogen fluoride gas into the chamber to selectively etch the silicon nitride film rather than the silicon oxide film, the silicon and the silicon germanium.SELECTED DRAWING: Figure 4 【課題】窒化シリコン膜を、酸化シリコン膜、シリコンおよびシリコンゲルマニウムに対して高い選択性でエッチングすることができるエッチング方法を提供する。【解決手段】窒化シリコン膜、酸化シリコン膜、シリコンおよびシリコンゲルマニウムを有する被処理基板をチャンバー内に配置し、前記チャンバー内の圧力を１３３３Ｐａ以上にし、前記チャンバー内にフッ化水素ガスを供給し、前記窒化シリコン膜を、前記酸化シリコン膜、シリコンおよびシリコンゲルマニウムに対して選択的にエッチングする。【選択図】図４