SEMICONDUCTOR DEVICE MANUFACTURING METHOD
To prevent solder flow, which is little affected by temperature.SOLUTION: A semiconductor device manufacturing method includes steps of: joining a wire W1 to a principal surface 4a of a substrate 4 by ultrasonic joining in such a manner that a region Rg1 of the principal surface 4a, which is a suppl...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To prevent solder flow, which is little affected by temperature.SOLUTION: A semiconductor device manufacturing method includes steps of: joining a wire W1 to a principal surface 4a of a substrate 4 by ultrasonic joining in such a manner that a region Rg1 of the principal surface 4a, which is a supply target of solder 3n, is surrounded by the wire W1; and supplying to the region Rg1, the solder 3n for joining an electrode terminal E1 with the substrate 4.SELECTED DRAWING: Figure 2
【課題】気温の影響をほとんど受けることなく、はんだの流動をとめる。【解決手段】半導体装置の製造方法は、基板４の主面４ａのうち、はんだ３ｎの供給対象となる領域Ｒｇ１をワイヤＷ１が囲んだ状態で、超音波接合により、ワイヤＷ１を主面４ａに接合する工程と、領域Ｒｇ１に、電極端子Ｅ１を基板４に接合するためのはんだ３ｎを供給する工程とを含む。【選択図】図２ |
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