SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

To provide an MISFET on a semiconductor substrate, which has an equal channel length all around.SOLUTION: An MISFET comprises: a pair of SiGe layers 4 (first semiconductor layers) provided on an Si substrate 1 in which a trench lies partially; a pair of SiGe layers 5 (second semiconductor layers) pr...

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Bibliographische Detailangaben
1. Verfasser:	SHIRATO TAKEHIDE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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