CYLINDRICAL SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

To provide a cylindrical sputtering target that can homogenize resistance characteristic in an axial direction by inhibiting a cylindrical compact from being bent in forming an elongated cylindrical target material, and to provide a method for manufacturing the same.SOLUTION: A cylindrical sputterin...

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Hauptverfasser: TSURUTA YOSHITAKA, NEGISHI TOMOYA
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a cylindrical sputtering target that can homogenize resistance characteristic in an axial direction by inhibiting a cylindrical compact from being bent in forming an elongated cylindrical target material, and to provide a method for manufacturing the same.SOLUTION: A cylindrical sputtering target includes: a cylindrical metal substrate; and a cylindrical ceramic target material joined on an outer peripheral side of the cylindrical substrate and formed integrally together into an axial length of 750 mm or more, where a variation coefficient of a bulk resistance rate in an axial direction at an outer peripheral surface of the cylindrical target material is 0.05 or less.SELECTED DRAWING: Figure 1 【課題】長尺の円筒型ターゲット材を成形する際の円筒型成形体の曲がりを抑制して、軸線方向での抵抗特性の均一化を図ることができる円筒型スパッタリングターゲット及びその製造方法を提供する。【解決手段】本発明の円筒型スパッタリングターゲットは、金属製の円筒型基材と、前記円筒型基材の外周側に接合されて、750mm以上の軸線方向の長さで一体に形成されたセラミックス製の円筒型ターゲット材とを備え、前記円筒型ターゲット材の外周面におけるバルク抵抗率の軸線方向の変動係数が0.05以下である。【選択図】図1