OXIDE SINTERED BODY AND SPUTTERING TARGET

To provide an oxide sintered body capable of suppressing generation of crack during bonding even in an In-Ga-Zn-Sn-based oxide sintered body to which a large amount of Ga is added, and a sputtering target using the oxide sintered body.SOLUTION: There is provided an oxide sintered body containing met...

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Bibliographische Detailangaben
Hauptverfasser:	TAO KOKI, MISHIYAMA KOHEI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To provide an oxide sintered body capable of suppressing generation of crack during bonding even in an In-Ga-Zn-Sn-based oxide sintered body to which a large amount of Ga is added, and a sputtering target using the oxide sintered body.SOLUTION: There is provided an oxide sintered body containing metallic elements constituted by In, Ga, Zn and Sn and containing GaInSnO, ZnGaOand InGaZnO, and satisfying following formulae (1) to (3), wherein percentages of content of In, Ga, Zn and Sn (atom%) in total metallic elements excluding oxygen contained in the oxide sintered body are [In], [Ga], [Zn] and [Sn] respectively. [Ga]≥37 atom% (1) [Sn]≤15 atom% (2) [Ga]/([In]+[Zn])≥0.7 (3).SELECTED DRAWING: Figure 1 【課題】Ｇａが多量に添加されたＩｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体においても、ボンディング時の割れの発生を抑制できる酸化物焼結体、および当該酸化物焼結体を用いたスパッタリングターゲットの提供。【解決手段】金属元素がＩｎ、Ｇａ、Ｚｎ及びＳｎから構成され、Ｇａ２Ｉｎ６Ｓｎ２Ｏ１６、ＺｎＧａ２Ｏ４およびＩｎＧａＺｎＯ４を含む酸化物焼結体であって、酸化物焼結体に含まれる酸素を除く全金属元素に対する、Ｉｎ、Ｇａ、Ｚｎ及びＳｎの含有量の割合（原子％）を、それぞれ［Ｉｎ］、［Ｇａ］、［Ｚｎ］及び［Ｓｎ］としたとき、下記式（１）〜（３）を満足することを特徴とする酸化物焼結体。［Ｇａ］≧３７原子％・・・（１）、［Ｓｎ］≦１５原子％・・・（２）、［Ｇａ］／（［Ｉｎ］＋［Ｚｎ］）≧０．７・・・（３）【選択図】図１