SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD

PROBLEM TO BE SOLVED: To remove a residue attached onto a pattern upper part while suppressing corrosion of a metal film exposed to a concave part of a pattern.SOLUTION: A substrate cleaning device according to an embodiment comprises first to third processing parts and a control part. The first processing part supplies a first processing liquid for removing a residue attached to a substrate to the substrate in which a metal film is exposed to a concave part of an uneven pattern. The second processing part supplies a second processing liquid for forming a protection film which is insoluble in the first processing liquid. The third processing part supplies a third processing liquid for melting the protection film to the substrate. The control part makes the first, second, and third processing parts to execute a protection film formation processing that forms the protection film onto the metal film in a state the pattern upper part is exposed from the protection film by supplying the second processing liquid to the substrate, a residue removing processing that removes the residue attached to the pattern upper part by supplying the first processing liquid to the substrate after the protection film formation processing, and a protection film removing processing that removes the protection film from the substrate by supplying the third processing liquid to the substrate after the residue removing processing.SELECTED DRAWING: Figure 4 【課題】パターンの凹部に露出した金属膜の侵食を抑えつつ、パターン上部に付着した残渣を除去すること。【解決手段】実施形態に係る基板洗浄装置は、第１〜第３処理部と制御部とを備える。第１処理部は、凹凸状のパターンの凹部に金属膜が露出した基板に対し、基板に付着する残渣を除去する第１処理液を供給する。第２処理部は、第１処理液に不溶な保護膜を形成する第２処理液を基板に供給する。第３処理部は、保護膜を溶解する第３処理液を基板に供給する。制御部は、基板に第２処理液を供給することにより、パターン上部を保護膜から露出させた状態で金属膜上に保護膜を形成する保護膜形成処理、保護膜形成処理後の基板に第１処理液を供給してパターン上部に付着した残渣を除去する残渣除去処理、残渣除去処理後の基板に第３処理液を供給して基板上から保護膜を除去する保護膜除去処理を第１処理部、第２処理部および第３処理部に実行させる。【選択図】図４