PLASMA PROCESSING APPARATUS AND CONTROL METHOD

PROBLEM TO BE SOLVED: To monitor plasma distribution.SOLUTION: A plasma processing apparatus includes a plurality of gas supply nozzles that are provided on a wall surface of a processing container and supply a processing gas toward the inside in the radial direction of the processing container, N (...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	OSADA ISATERU, IKEDA TARO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To monitor plasma distribution.SOLUTION: A plasma processing apparatus includes a plurality of gas supply nozzles that are provided on a wall surface of a processing container and supply a processing gas toward the inside in the radial direction of the processing container, N (N≥2) microwave introduction modules that are arranged in the circumferential direction of the top plate of the processing container and introduce microwaves for generating plasma into the processing container, and N sensors or Multiple sensors of N that are provided on the wall surface of the processing container and monitor at least one of an electron density Ne and an electron temperature Te of a plasma generated in the processing container.SELECTED DRAWING: Figure 4 【課題】プラズマの分布をモニタすることを目的とする。【解決手段】処理容器の壁面に設けられ、該処理容器の径方向の内側に向けて処理ガスを供給する複数のガス供給ノズルと、前記処理容器の天板の周方向に配置され、プラズマを生成するためのマイクロ波を該処理容器内に導入するＮ（Ｎ≧２）個のマイクロ波導入モジュールと、前記処理容器の壁面にＮ又はＮの倍数個設けられ、前記処理容器内にて生成されたプラズマの電子密度Ｎｅ及び電子温度Ｔｅの少なくともいずれか一方をモニタするセンサと、を有するプラズマ処理装置が提供される。【選択図】図４