MANUFACTURING METHOD OF METALLIC THIN FILM

PROBLEM TO BE SOLVED: To provide a manufacturing method of a metallic thin film under the condition that oxidizing gas is not used.SOLUTION: In a method for manufacturing a metallic thin film in which a metal complex of ruthenium, titanium, niobium, tantalum or the like is vaporized, supplied to a substrate 4 as carrier gas or dilution gas such as nitrogen or argon, and decomposed on the substrate 4, a metallic thin film is manufactured by a gas phase deposition method based on a chemical reaction under the condition that oxidizing gas such as oxygen or ozone is not used as decomposition gas, and under the condition that reducing gas is allowed to exist as the decomposition gas.SELECTED DRAWING: Figure 1 【課題】酸化性ガスを用いない条件下で金属薄膜を作製方法を提供する。【解決手段】ルテニウム、チタン、ニオブおよびタンタルなどの金属錯体を蒸発させて、窒素やアルゴンなどのをキャリアガス、希釈ガスとして基板４上に供給し、基板４上で分解することにより金属薄膜を作製する方法において、分解ガスとして酸素やオゾンなどの酸化性ガスを用いない条件下で、還元性ガス、分解ガスとして還元性ガスを存在させた条件で、化学反応に基づく気相蒸着法により金属薄膜を作製する。【選択図】図１