SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a vertical power MOSFET with a super junction structure, in which, such a problem that, along with the higher aspect ratio of an n-type column region and a p-type column region, the breakdown voltage of a power MOSFET cannot be secured due to variations in impurity c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAGUCHI NATSUO, ABIKO YUYA, EGUCHI SOJI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!