ZIRCONIA STRUCTURE

To provide a zirconia structure having excellent withstand voltage.SOLUTION: There is provided a zirconia structure having a dielectric breakdown voltage of 100 V/μm or more, as measured by JIS C2110-1. The zirconia structure is a polycrystalline body having a thickness of 1 μm or more, a porosity o...

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Bibliographische Detailangaben
Hauptverfasser: ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a zirconia structure having excellent withstand voltage.SOLUTION: There is provided a zirconia structure having a dielectric breakdown voltage of 100 V/μm or more, as measured by JIS C2110-1. The zirconia structure is a polycrystalline body having a thickness of 1 μm or more, a porosity of less than 0.1% and a volume resistivity of 10Ω cm or more in which the addition amount of Y2O3 is 5 wt.% or less. For example, there is provided a zirconia structure having a mechanical strength equal to that of a sintered body which can be formed by an aerosol deposition (AD) method and can form a structure at normal temperature without especially requiring heating means or cooling means.SELECTED DRAWING: Figure 1 【課題】優れた絶縁耐圧を有するジルコニア構造物の提供。【解決手段】JIS C2110-1によって測定される耐電圧が100V/μm以上である、ジルコニア構造物。該ジルコニア構造物は、厚さが1μm以上、気孔率が0.1%未満、体積抵抗率が1013Ω・cm以上の多結晶体であり、Y2O3の添加量が5wt%以下であるジルコニア構造物。例えばエアロゾルデポジッション(AD)法によって形成することができ、特に加熱手段や冷却手段を必要とせずに常温で構造物を形成することができ、焼結体と同等の機械的強度を有するジルコニア構造物。【選択図】図1