ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR COMPOSITION, MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM, AND POLYMER USED THEREFOR
PROBLEM TO BE SOLVED: To provide an organic semiconductor element which does not easily deteriorate semiconductor characteristics even in a high temperature environment.SOLUTION: There is provided an organic semiconductor element including a polymer in which an organic semiconductor layer has a stru...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide an organic semiconductor element which does not easily deteriorate semiconductor characteristics even in a high temperature environment.SOLUTION: There is provided an organic semiconductor element including a polymer in which an organic semiconductor layer has a structure of the formula (1) or (2) and a conjugated structure of a formula (G). X is a nitrogen atom or CR, Yis an oxygen atom or a sulfur atom, Ris a hydrogen atom or a substituent. Ar-(Vr)-ArFormula (G). Arand Areach represent a single bond or a specific divalent group, and Vr represents a divalent conjugated group having 2 to 40 carbon atoms.SELECTED DRAWING: None
【課題】高温環境下でも半導体特性が低下しにくい有機半導体素子を提供する。【解決手段】有機半導体層が式(1)又は(2)の構造と式(G)の共役系構造とを有するポリマーを含む有機半導体素子。Xは窒素原子又はCRa、Y1は酸素原子又は硫黄原子、Raは水素原子又は置換基を示す。*−Ar1−(Vr)p3−Ar2−*式(G)Ar1及びAr2は単結合又は特定の2価の基、Vrは炭素数2〜40の2価の共役基を示す。【選択図】なし |
---|