SURFACE EMISSION SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser having a structure that enables the optical mode control.SOLUTION: A surface emission semiconductor laser comprises: a semiconductor laminate layer for a distributed reflector; and a post extending in a first direction from a substrate toward the semiconductor laminate layer and having side faces and an upper face. The post has a composite structure including an oxide portion and a semiconductor portion. The post includes an outer peripheral portion extending in the first direction, a first portion, a second portion, a third portion and a fourth portion. The oxide portion is located in the second and fourth portions, and the semiconductor portion is located in the first and third portions of the post. The post has first, second, third and fourth level parts which are arrayed in turn in the first direction. The outer peripheral portion includes a first region having a first hydrogen concentration. The first region is provided across the second, third and fourth level parts. The second level part includes a second region having a second hydrogen concentration. The first and second hydrogen concentrations are larger than a hydrogen concentration of the first portion.SELECTED DRAWING: Figure 1 【課題】光モードの制御を可能にする構造を有する面発光半導体レーザを提供する。【解決手段】面発光半導体レーザは、分布反射器のための半導体積層と、基板から半導体積層への第１方向に延在する側面及び上面を有するポストとを備え、ポストの複合構造は、酸化物部分及び半導体部分を含み、ポストは、第１方向に延在する外周部、第１部分、第２部分、第３部分、第４部分を含み、酸化物部分は、第２部分及び第４部分に位置し、半導体部分は、ポストの第１部分及び第３部分に位置し、ポストの第１レベル部、第２レベル部、第３レベル部及び第４レベル部は、第１方向に順に配列され、外周部は、第１水素濃度を有する第１領域を含み、第１領域は、第２レベル部、第３レベル部及び第４レベル部にわたって設けられ、第２レベル部は、第２水素濃度を有する第２領域を含み、第１水素濃度及び第２水素濃度は、第１部分の水素濃度より大きい。【選択図】図１