MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve positioning accuracy in a patterning step; and to improve defect and position specification accuracy of a foreign matter in an in-line inspection step.SOLUTION: In a manufacturing method of a semiconductor device, for example, after forming a conductor film CF, a gro...

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1. Verfasser:	FUJISHIRO AKIHIRO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve positioning accuracy in a patterning step; and to improve defect and position specification accuracy of a foreign matter in an in-line inspection step.SOLUTION: In a manufacturing method of a semiconductor device, for example, after forming a conductor film CF, a groove DIT1 which is a discriminable portion functioning as an alignment mark is formed in the conductor film CF, or formed on the conductor film CF.SELECTED DRAWING: Figure 3 【課題】パターニング工程における位置合わせ精度を向上する。また、インライン検査工程における欠陥および異物の位置特定精度を向上する。【解決手段】半導体装置の製造方法では、例えば、導体膜ＣＦを形成した後、アライメントマークとして機能する識別可能部位である溝ＤＩＴ１を導体膜ＣＦに形成、あるいは導体膜ＣＦ上に形成する。【選択図】図３