SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses the crack and warpage of a primary molding while having a secondary molding structure including the primary molding and secondary molding resin and a manufacturing method of the same.SOLUTION: A semiconductor device includes: a...

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Bibliographische Detailangaben
Hauptverfasser: IZUMI RYUSUKE, YOSHIDA NORIFUMI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses the crack and warpage of a primary molding while having a secondary molding structure including the primary molding and secondary molding resin and a manufacturing method of the same.SOLUTION: A semiconductor device includes: a primary molding 10 which has a semiconductor chip 12 and a primary molding resin 13; a housing component 20 which is formed with an insertion hole 21 to which the primary molding is inserted; and a secondary molding resin 30 which is made of the resin material, and integrally covers a region exposed from the insertion hole 21 of the surface of the primary molding 10 and a partial region including a region surrounding the insertion hole 21 of the surface of the housing component 20. A portion of the primary molding 10 is inserted to the insertion hole 21. A manufacturing method of the semiconductor device includes the step of insertion-molding of the secondary molding resin 30 after fitting the primary molding 10 to the insertion hole 21. With this configuration, the semiconductor device absorbs the load applied to the primary molding 10 with the housing component 20, and suppresses the crack and the like of the primary molding 10 while having the secondary molding structure.SELECTED DRAWING: Figure 1 【課題】一次成形体と二次成形樹脂とを有してなる二次成形体構造とされつつ、一次成形体のクラックや反りが抑制された半導体装置およびその製造方法を実現する。【解決手段】半導体チップ12と一次成形樹脂13とを有してなる一次成形体10と、一次成形体が挿入される挿入穴21が形成された筐体部品20と、樹脂材料によりなり、一次成形体10の表面のうち挿入穴21から露出した領域と筐体部品20の表面のうち挿入穴21を囲む領域を含む一部の領域とを一体的に覆う二次成形樹脂30と、を備え、一次成形体10の一部が挿入穴21に挿入された半導体装置とする。当該半導体装置の製造方法は、挿入穴21に一次成形体10を嵌め込んだ後で二次成形樹脂30のインサート成形をすることを含む。これにより、一次成形体10にかかる荷重を筐体部品20で吸収し、二次成形体構造とされつつも、一次成形体10のクラック等が抑制された半導体装置となる。【選択図】図1