MOSFET

PROBLEM TO BE SOLVED: To optimize a p-type impurity concentration profile in a floating region.SOLUTION: A floating region has a high concentration region and a low concentration region along a thickness direction of a SiC substrate. A p-type impurity concentration in the low concentration region is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KANEHARA HIROMICHI, YAMASHITA YUSUKE, TSUJIMURA MASATOSHI, ARAUCHI TAKUJI, URAGAMI YASUSHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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