METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL INGOT, AND SILICON SINGLE CRYSTAL GROWING APPARATUS

PROBLEM TO BE SOLVED: To provide a method for manufacturing a n type silicon single crystal ingot suitable for supplying a power device, having a small tolerance of specific resistance in the crystal growth direction and having high resistance, and a silicon single crystal growing apparatus.SOLUTION: A method for manufacturing a silicon single crystal ingot using Sb or As as a n type dopant by a silicon single crystal growing apparatus using the Czochralski method comprises: a measuring step of measuring the gas concentration of a compound gas including the n-type dopant as a constituent element while pulling a silicon single crystal ingot 1; and a pulling condition value control step of controlling pulling condition values including at least one of pressure in a chamber 30, an Ar gas flow rate and an interval G between an induction part 70 and a silicon melt 10 so that the measured gas concentration is in the range of target gas concentration.SELECTED DRAWING: Figure 2 【課題】パワーデバイスに供して好適な、結晶成長方向における比抵抗の公差の小さいｎ型で高抵抗のシリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置を提供する。【解決手段】チョクラルスキー法を用いるシリコン単結晶育成装置によりＳｂまたはＡｓをｎ型ドーパントとするシリコン単結晶インゴットの製造方法において、シリコン単結晶インゴット１の引き上げを行いながら、前記ｎ型ドーパントを構成元素に含む化合物ガスのガス濃度を測定する測定工程と、前記測定したガス濃度が目標ガス濃度の範囲内に入るようにチャンバ３０内の圧力、Ａｒガスの流量、ならびに誘導部７０およびシリコン融液１０の間隔Ｇの少なくともいずれか１つを含む引き上げ条件値を調整する引き上げ条件値調整工程とを行う。【選択図】図２