PHOTO-REACTION DEVICE

PROBLEM TO BE SOLVED: To provide a photo-reaction device using a semiconductor nanowire as a PEC element in which high voltage required in reaction such as decomposition and synthesis can be obtained by using sunlight with high efficiency.SOLUTION: A photo-reaction device comprises a nanowire 101, a...

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Hauptverfasser:	ONO YOKO, TATENO KOTA, KUMAKURA KAZUHIDE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES THEIR RELEVANT APPARATUS TRANSPORTING TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photo-reaction device using a semiconductor nanowire as a PEC element in which high voltage required in reaction such as decomposition and synthesis can be obtained by using sunlight with high efficiency.SOLUTION: A photo-reaction device comprises a nanowire 101, a first electrode 102 formed on one end of the nanowire 101, and a second electrode 103 formed on the other end of the nanowire 101. The nanowire 101 comprises a first part 104 which is composed of group III-V compound semiconductor and a second part 105 which is connected in series to the first part 104 and composed of group III-V compound semiconductor. Each of the first part 104 and the second part 105 comprises a pin-type diode structure by an n-type layer, an i-type layer, and a p-type layer.SELECTED DRAWING: Figure 1 【課題】半導体ナノワイヤをＰＥＣ素子として用いた光反応装置において、太陽光を用いて高い効率で分解や合成などの反応に必要な高い電圧を得ることができるようにする。【解決手段】ナノワイヤ１０１と、ナノワイヤ１０１の一端に形成された第１電極１０２と、ナノワイヤ１０１の他端に形成された第２電極１０３とを備える。ナノワイヤ１０１は、ＩＩＩ−Ｖ族化合物半導体から構成された第１部分１０４と、第１部分１０４に直列に接続されてＩＩＩ−Ｖ族化合物半導体から構成された第２部分１０５とを備える。第１部分１０４および第２部分１０５は、それぞれ、ｎ型層，ｉ型層，ｐ型層によるｐｉｎ型ダイオード構造を備える。【選択図】図１