RESIST UNDERLAYER COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE SAME

PROBLEM TO BE SOLVED: To provide a resist underlayer composition exhibiting excellent absorption of light of predetermined wavelength and excellent coating properties; and a method of forming patterns using the same.SOLUTION: According to one embodiment, the resist underlayer composition includes a...

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Hauptverfasser:	BAE SHINHYO, KWON SOONHYUNG, JOO BEOM JUN, BAEK JAEYEOL, PARK HYEON, HAN KWEN-WOO, CHOI YOOJEONG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a resist underlayer composition exhibiting excellent absorption of light of predetermined wavelength and excellent coating properties; and a method of forming patterns using the same.SOLUTION: According to one embodiment, the resist underlayer composition includes a polymer including a partial structure represented by the chemical formula 1 and a partial structure represented by the chemical formula 2, and a solvent, where the definition in the chemical formulas 1 and 2 is as described in the specification.SELECTED DRAWING: Figure 1 【課題】所定の波長の光に対する優れた吸収性を有するとともに、優れたコーティング性を有するレジスト下層膜用組成物およびこれを用いたパターン形成方法を提供する。【解決手段】本発明の一実施形態に係るレジスト下層膜用組成物は、下記化学式１および化学式２で表される部分構造を有する重合体と、溶媒と、を含む。前記化学式１および化学式２の定義は、明細書内に記載のとおりである。【選択図】図１