PLASMA CVD DEVICE AND FILM DEPOSITION METHOD

PROBLEM TO BE SOLVED: To reduce costs in a plasma CVD device for applying film deposition treatment to inner faces of plural containers.SOLUTION: A plasma CVD device comprises: a high frequency power source 31; an automatic matching unit 23 electrically connected to a high frequency power source 31;...

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Bibliographische Detailangaben
Hauptverfasser: KAWABE TAKEHARU, HASHIMOTO MAMORU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce costs in a plasma CVD device for applying film deposition treatment to inner faces of plural containers.SOLUTION: A plasma CVD device comprises: a high frequency power source 31; an automatic matching unit 23 electrically connected to a high frequency power source 31; a switcher 22 electrically connected to the automatic matching unit 23; a first electrode 3 and a second electrode 33 electrically connected to the switcher 22; a first container 7 arranged inside the first electrode 3; a second container arranged inside the second electrode 33; a gas supply mechanism 19 for supplying raw material gas into the first and second containers; and a vacuum evacuation mechanism 21 for vacuum-evacuating the first container 7 and the second container. The switcher 22 has a first path electrically connected to the automatic matching unit 23 and the first electrode 3, and a second path electrically connected to the automatic matching unit 23 and the second electrode 33.SELECTED DRAWING: Figure 3 【課題】複数の容器の内面に成膜処理を行うプラズマCVD装置におけるコストの低減。【解決手段】高周波電源31と、高周波電源31に電気的に接続された自動整合器23と、自動整合器23に電気的に接続された切替器22と、切替器22に電気的に接続された第1の電極3及び第2の電極33と、第1の電極3の内側に配置された第1の容器7と、第2の電極33の内側に配置された第2の容器と、前記第1の容器内及び前記第2の容器内に原料ガスを供給するガス供給機構19と、第1の容器7内及び前記第2の容器内を真空排気する真空排気機構21と、を具備し、切替器22は、自動整合器23と第1の電極3とを電気的に接続する第1の経路と、自動整合器23と第2の電極33とを電気的に接続する第2の経路を有するプラズマCVD装置。【選択図】図3