UNDERFILL MATERIAL, ELECTRONIC COMPONENT ENCAPSULATED BY THE UNDERFILL MATERIAL AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide an underfill material good in flowability at a narrow gap (e.g. gap of 50 μm or less), having a high infiltration rate and capable of preventing generation of voids during its molding, and further provide a highly reliable flip chip-type semiconductor device by using...

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Bibliographische Detailangaben
Hauptverfasser: SUZUKI NAOYA, INABA TAKAKAZU, DEGUCHI OUSHI, AKAGI SEIICHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an underfill material good in flowability at a narrow gap (e.g. gap of 50 μm or less), having a high infiltration rate and capable of preventing generation of voids during its molding, and further provide a highly reliable flip chip-type semiconductor device by using the underfill material to reduce thermal stress on a semiconductor chip and a pump.MEANS FOR SOLVING THE PROBLEM: An underfill material contains (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler. An average particle diameter of the (C) inorganic filler is less than 5 μm and the content thereof is 67 mass% or more and less than 85 mass% based on the total of the underfill material, and its viscosity at 110°C is 0.2 Pa s or less.SELECTED DRAWING: None 【課題】狭ギャップ(例えば、50μm以下のギャップ)での流動性が良好であり、浸透速度が速く、成形時のボイドの発生を抑制できるアンダーフィル材、及びこれにより半導体チップ及びバンプにかかる熱応力を低減させ、高信頼性のフリップチップ型半導体装置を提供する。【解決する手段】本発明は、(A)エポキシ樹脂、(B)硬化剤、(C)無機充填材を含み、前記(C)無機充填材の平均粒径及び含有量が、それぞれ5μm未満及びアンダーフィル材全体の67質量%以上85質量%未満であり、かつ110℃における粘度が0.2Pa・s以下である。【選択図】なし