PREFORM FOR SEMICONDUCTOR SEALING

PROBLEM TO BE SOLVED: To provide a preform for semiconductor sealing, which is superior in heat resistance and high in reliability and quality.SOLUTION: A preform for semiconductor sealing comprises: a metal or alloy as a matrix, provided that the metal or alloy includes Sn or a Sn alloy, and Cu or...

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Hauptverfasser: SEKINE SHIGENOBU, SHIMATANI KAZUNORI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a preform for semiconductor sealing, which is superior in heat resistance and high in reliability and quality.SOLUTION: A preform for semiconductor sealing comprises: a metal or alloy as a matrix, provided that the metal or alloy includes Sn or a Sn alloy, and Cu or a Cu alloy; and at least 2 wt.% of an intermetallic compound of Cu and Sn. The preform for semiconductor sealing is put over a semiconductor device and then heated and pressurized to form a sealing layer 300, which allows the preform to have a superior heat resistance.SELECTED DRAWING: Figure 5 【課題】耐熱性に優れた高信頼性及び高品質の半導体封止用プリフォームを提供すること。【解決手段】半導体封止用プリフォームは、金属または合金を主材としており、金属または合金は、SnまたはSn合金、CuまたはCu合金を含み、さらにCuとSnとの金属間化合物を少なくとも2重量%含有している。半導体素子の上に、半導体封止用プリフォームを置き、加熱・加圧して封止層300を形成することで、優れた耐熱性を有することができる。【選択図】図5