SEMICONDUCTIVE PROCESSING DEVICE AND METHOD OF MEASURING SEMICONDUCTOR PROCESSING FLUID
PROBLEM TO BE SOLVED: To provide a semiconductor processing device with which it is possible to measure the properties of a fluid in a tank without affecting semiconductor material.SOLUTION: The semiconductor processing device comprises: a processing tank 2 in which wafers can be immersed in an insi...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor processing device with which it is possible to measure the properties of a fluid in a tank without affecting semiconductor material.SOLUTION: The semiconductor processing device comprises: a processing tank 2 in which wafers can be immersed in an inside fluid 100; a transparent plate 7 provided in the processing tank and arranged in parallel to the wafers between the surfaces of the immersed wafers 20, with a space 10 therebetween; a laser oscillator 8 for radiating a laser beam 30 of plane shape parallel to the wafers between the wafers and the transparent plates; an optical detector 14 for detecting scattered light 40 of the laser beam having been scattered by the fluid and passed through the transparent plates 7; and a measurement computation unit 15 for measuring, by computation, the properties of the fluid 100 on the basis of the scattered light detected by the optical detector 14.SELECTED DRAWING: Figure 2
【課題】 半導体材料に影響を与えることなく、槽内の流動体の性状をリアルタイムで計測することができる半導体処理装置を提供する。【解決手段】 内部の流動体100にウエハを浸漬可能な処理槽2と、前記処理槽内に設けられ、前記浸漬されたウエハ20表面との間に、隙間10をおいて前記ウエハと平行配置された透明板7と、前記ウエハと透明板との間に前記ウエハに平行な面状のレーザー光30を照射するレーザー発振器8と、前記レーザー光が前記流動体により散乱し、前記透明板7を透過した散乱光40を検出する光検出器14と、前記光検出器14が検出した前記散乱光に基づいて、前記流動体100の性状を計測演算する計測演算部15と、を備える。【選択図】 図2 |
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