DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1...
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creator | TAKAYAMA KOICHI MATSUMURA KEI |
description | PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1A, Q1B, Q2A, Q2B of a diode test apparatus 1 are controlled, a reverse recovery safe operation area test is performed in which a constant energy load is continuously applied to all diodes D1A, D1B, D2A, and D2B mounted on the diode test apparatus, and the energy consumption is suppressed by a reflux operation to an inductive load L and by a regenerative operation to a power supply P or a smoothing capacitor C.SELECTED DRAWING: Figure 2
【課題】逆回復安全動作領域試験において、一定のエネルギーを連続してデバイスに印加することができない、および試験時にエネルギー消費が多く、かつ評価時間が長い。【解決手段】ダイオード試験装置1のパワー半導体デバイスQ1A,Q1B,Q2A,Q2Bのターンオンおよびターンオフタイミングを制御し、装着した全てのダイオードD1A,D1B,D2A,D2Bに対し一定のエネルギー負荷を連続して印加する逆回復安全動作領域試験を実施し、かつ誘導性負荷Lへの還流動作および、電源Pもしくは平滑コンデンサCへの回生動作により消費エネルギーを抑制した。【選択図】図2 |
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【課題】逆回復安全動作領域試験において、一定のエネルギーを連続してデバイスに印加することができない、および試験時にエネルギー消費が多く、かつ評価時間が長い。【解決手段】ダイオード試験装置1のパワー半導体デバイスQ1A,Q1B,Q2A,Q2Bのターンオンおよびターンオフタイミングを制御し、装着した全てのダイオードD1A,D1B,D2A,D2Bに対し一定のエネルギー負荷を連続して印加する逆回復安全動作領域試験を実施し、かつ誘導性負荷Lへの還流動作および、電源Pもしくは平滑コンデンサCへの回生動作により消費エネルギーを抑制した。【選択図】図2</description><language>eng ; jpn</language><subject>MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180719&DB=EPODOC&CC=JP&NR=2018112404A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180719&DB=EPODOC&CC=JP&NR=2018112404A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAYAMA KOICHI</creatorcontrib><creatorcontrib>MATSUMURA KEI</creatorcontrib><title>DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1A, Q1B, Q2A, Q2B of a diode test apparatus 1 are controlled, a reverse recovery safe operation area test is performed in which a constant energy load is continuously applied to all diodes D1A, D1B, D2A, and D2B mounted on the diode test apparatus, and the energy consumption is suppressed by a reflux operation to an inductive load L and by a regenerative operation to a power supply P or a smoothing capacitor C.SELECTED DRAWING: Figure 2
【課題】逆回復安全動作領域試験において、一定のエネルギーを連続してデバイスに印加することができない、および試験時にエネルギー消費が多く、かつ評価時間が長い。【解決手段】ダイオード試験装置1のパワー半導体デバイスQ1A,Q1B,Q2A,Q2Bのターンオンおよびターンオフタイミングを制御し、装着した全てのダイオードD1A,D1B,D2A,D2Bに対し一定のエネルギー負荷を連続して印加する逆回復安全動作領域試験を実施し、かつ誘導性負荷Lへの還流動作および、電源Pもしくは平滑コンデンサCへの回生動作により消費エネルギーを抑制した。【選択図】図2</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBz8fR3cVUIcQ0OUXAMCHAMcgwJDdZRQBL1dQ3x8HdRcPRzgYr6OvqFujk6h4QGefq5Q6V5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgaGFoaGRiYGJozFRigDcVSxk</recordid><startdate>20180719</startdate><enddate>20180719</enddate><creator>TAKAYAMA KOICHI</creator><creator>MATSUMURA KEI</creator><scope>EVB</scope></search><sort><creationdate>20180719</creationdate><title>DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD</title><author>TAKAYAMA KOICHI ; MATSUMURA KEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2018112404A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2018</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAYAMA KOICHI</creatorcontrib><creatorcontrib>MATSUMURA KEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAYAMA KOICHI</au><au>MATSUMURA KEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD</title><date>2018-07-19</date><risdate>2018</risdate><abstract>PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1A, Q1B, Q2A, Q2B of a diode test apparatus 1 are controlled, a reverse recovery safe operation area test is performed in which a constant energy load is continuously applied to all diodes D1A, D1B, D2A, and D2B mounted on the diode test apparatus, and the energy consumption is suppressed by a reflux operation to an inductive load L and by a regenerative operation to a power supply P or a smoothing capacitor C.SELECTED DRAWING: Figure 2
【課題】逆回復安全動作領域試験において、一定のエネルギーを連続してデバイスに印加することができない、および試験時にエネルギー消費が多く、かつ評価時間が長い。【解決手段】ダイオード試験装置1のパワー半導体デバイスQ1A,Q1B,Q2A,Q2Bのターンオンおよびターンオフタイミングを制御し、装着した全てのダイオードD1A,D1B,D2A,D2Bに対し一定のエネルギー負荷を連続して印加する逆回復安全動作領域試験を実施し、かつ誘導性負荷Lへの還流動作および、電源Pもしくは平滑コンデンサCへの回生動作により消費エネルギーを抑制した。【選択図】図2</abstract><oa>free_for_read</oa></addata></record> |
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subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
title | DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD |
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