DIODE TEST APPARATUS, DIODE TEST METHOD AND DIODE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1...
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| Sprache: | eng ; jpn |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To solve the problems in a reverse recovery safe operation area test that constant energy cannot be continuously applied to a device, energy consumption is high during the test, and evaluation time is long.SOLUTION: Turn-on and turn-off timings of power semiconductor devices Q1A, Q1B, Q2A, Q2B of a diode test apparatus 1 are controlled, a reverse recovery safe operation area test is performed in which a constant energy load is continuously applied to all diodes D1A, D1B, D2A, and D2B mounted on the diode test apparatus, and the energy consumption is suppressed by a reflux operation to an inductive load L and by a regenerative operation to a power supply P or a smoothing capacitor C.SELECTED DRAWING: Figure 2
【課題】逆回復安全動作領域試験において、一定のエネルギーを連続してデバイスに印加することができない、および試験時にエネルギー消費が多く、かつ評価時間が長い。【解決手段】ダイオード試験装置１のパワー半導体デバイスＱ１Ａ，Ｑ１Ｂ，Ｑ２Ａ，Ｑ２Ｂのターンオンおよびターンオフタイミングを制御し、装着した全てのダイオードＤ１Ａ，Ｄ１Ｂ，Ｄ２Ａ，Ｄ２Ｂに対し一定のエネルギー負荷を連続して印加する逆回復安全動作領域試験を実施し、かつ誘導性負荷Ｌへの還流動作および、電源Ｐもしくは平滑コンデンサＣへの回生動作により消費エネルギーを抑制した。【選択図】図２ |
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