APPARATUS AND METHOD FOR GROWING OXIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide an apparatus for growing an oxide single crystal, capable of corresponding to low cost, and a large diameter and long size of the oxide single crystal.SOLUTION: An apparatus 100 for growing an oxide single crystal comprises: a heat insulator 7 surrounding a heating space SP; a crucible 1 arranged in the heating space SP; a resistance heating type heater 4 arranged in the heating space SP; and an intermediate annular plate member 7C arranged in the heating space SP. The heating space SP is thermally separated into an upper heating space SP1 and a lower heating space SP2 by the crucible 1 and the intermediate annular plate member 7C, and the resistance heating type heater 4 includes an upper stage heater 4U arranged in the upper heating space SP1, and a middle heater 4M and lower stage heater 4L arranged in the lower heating space SP2 .SELECTED DRAWING: Figure 1 【課題】低コストで酸化物単結晶の大口径化及び長尺化に対応できる酸化物単結晶の育成装置を提供すること。【解決手段】酸化物単結晶の育成装置１００は、加熱空間ＳＰを囲む断熱材７と、加熱空間ＳＰ内に配置されるルツボ１と、加熱空間ＳＰ内に配置される抵抗加熱方式のヒータ４と、加熱空間ＳＰ内に配置される中間環状板部材７Ｃとを有する。加熱空間ＳＰは、ルツボ１と中間環状板部材７Ｃによって上部加熱空間ＳＰ１と下部加熱空間ＳＰ２に熱的に分離される。抵抗加熱方式のヒータ４は、上部加熱空間ＳＰ１に配置される上段ヒータ４Ｕと、下部加熱空間ＳＰ２に配置される中段ヒータ４Ｍ及び下段ヒータ４Ｌとを含む。【選択図】図１