SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To make it possible to employ a copper bonding wire by inhibiting oxidation of a preliminary solder.SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a first semifinished product where a lower surface of a conductive spacer is soldered on a...

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Bibliographische Detailangaben
Hauptverfasser: OKUMURA TOMOMI, SATO KAISEI, HATASA KEITA
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To make it possible to employ a copper bonding wire by inhibiting oxidation of a preliminary solder.SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a first semifinished product where a lower surface of a conductive spacer is soldered on a second conductive member and a preliminary solder is provided on an upper surface of the conductive spacer; preparing a second semifinished product where a lower surface of a semiconductor element is soldered on a first conductive member and a bonding wire is bonded to an upper surface of the semiconductor element; and melting the preliminary solder of the first semifinished product to solder the upper surface of the semiconductor element of the second semifinished product to the lower surface of the conductive spacer of the first semifinished product.SELECTED DRAWING: Figure 5 【課題】 予備はんだの酸化を防止して銅製のボンディングワイヤの採用を可能とする。【解決手段】 半導体装置の製造方法は、第2導電性部材に導電性スペーサの下面がはんだ付けされているとともに、導電性スペーサの上面に予備はんだが設けられた第1半製品を用意する工程と、第1導電性部材に半導体素子の下面がはんだ付けされているとともに、半導体素子の上面にボンディングワイヤが接合された第2半製品を用意する工程と、第1半製品の予備はんだを溶融して、第2半製品の半導体素子の上面を、第1半製品の導電性スペーサの下面にはんだ付けする工程とを備える。【選択図】図5