GRAPHENE WITH GROWN METAL CHALCOGENIDE LAYER AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide graphene on which metal chalcogenide layers are grown in both horizontal and vertical directions, which can remarkably enhance sensing efficiency in respect of light, harmful substance, etc., and catalyst property when used as a hydrogenation catalyst or an electrode for photocatalyst.SOLUTION: A process for producing graphene on which a metal chalcogenide layer is grown comprises the steps of: growing a graphene layer on a cupper foil by CVD method; transferring the graphene layer to an SiO/Si substrate; washing the transferred graphene layer and then dispersing metal chalcogenide powder directly on the graphene layers; growing a metal chalcogenide layer in both horizontal and vertical directions under high grade gas atmosphere or depositing a layer containing carbon on the metal chalcogenide layer or another two-dimensional material by a plasma method.SELECTED DRAWING: Figure 1 【課題】光、有害物質、等のセンシング効率、および水素生成触媒、光触媒用電極とした際の触媒性、を格段に向上させることができる、金属カルコゲナイド層を水平・垂直の両方向に成長させたグラフェンおよびその製造方法の提供。【解決手段】グラフェン膜を銅箔に、ＣＶＤ法により成長させ、ＳｉＯ２／Ｓｉ基板に移し、洗浄後、金属カルコゲナイド粉末を、直接グラフェン膜上に分散させ、高純度ガス雰囲気中で、金属カルコゲナイド層を、水平・垂直の両方向に成長させる、またはこの金属カルコゲナイド層及び他の二次元材料上に、プラズマ法により、炭素を含む膜を、堆積させる金属カルコゲナイド層成長グラフェンの製造方法。【選択図】図１