SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device having good electric characteristics.SOLUTION: A semiconductor device comprises: a first conductor arranged on a substrate; a first insulator arranged on the first conductor; an oxide arranged on the first insulator; a second insulator arranged on the oxide; a second conductor arranged on the second insulator; a third insulator arranged on the second conductor; a fourth insulator arranged in contact with a lateral face of the second insulator, a lateral face of the second conductor and a lateral face of the third insulator; and a fifth insulator arranged in contact with the oxide and the fourth insulator. The second conductor has a first region and a second region which covers a lateral face of the oxide; a distance between a first lateral face and a second lateral face opposite to the first lateral face of the second conductor in the first region is smaller than a distance between a third lateral face and a fourth lateral face opposite to the third lateral face of the second conductor in the second region; and in the oxide, a region where an upper surface of the oxide and the lateral face of the oxide cross each other is covered with the second region.SELECTED DRAWING: Figure 1 【課題】良好な電気特性を有する半導体装置を提供する。【解決手段】基板上に配置された第１の導電体と、第１の導電体の上に配置された第１の絶縁体と、第１の絶縁体の上に配置された酸化物と、酸化物の上に配置された第２の絶縁体と、第２の絶縁体の上に配置された第２の導電体と、第２の導電体の上に配置された第３の絶縁体と、第２の絶縁体の側面、第２の導電体の側面、第３の絶縁体の側面に接して配置された第４の絶縁体と、酸化物、かつ第４の絶縁体に接して配置された第５の絶縁体と、を有し第２の導電体は、第１の領域と、酸化物の側面を覆う第２の領域と、を有し、第１の領域内における、第２の導電体の第１の側面と第１の側面と対向する第２の側面との距離は、第２の領域おける、第２の導電体の第３の側面と第３の側面と対向する第４の側面との距離よりも、小さく、酸化物において、酸化物の上面と、酸化物の側面が交わる領域は、第２の領域に覆われている。【選択図】図１