SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To form a high-resistance region capable of withstanding a heat treatment at a temperature equal to or higher than 200°C.SOLUTION: A manufacturing method of a semiconductor device 10 comprises the steps of: irradiating a p type semiconductor substrate 12 where a semiconductor element is formed with hydrogen(H) ion to form a high resistance region 30 which is a region with a hydrogen density of not less than 2×10cmand not more than 2×10cmand has a resistivity higher than that of the p type semiconductor substrate 12 before ion irradiation; and heating at a temperature not less than 200°C and not more than 400°C, the p type semiconductor substrate 12 where the high resistance region 30 is formed.SELECTED DRAWING: Figure 1 【課題】２００℃以上の熱処理に耐えうる高抵抗領域を形成する。【解決手段】半導体装置１０の製造方法は、半導体素子が形成されたｐ型半導体基板１２に水素（Ｈ）イオンを照射し、水素密度が２×１０１５ｃｍ−３以上２×１０１７ｃｍ−３以下となる領域であってイオン照射前のｐ型半導体基板１２よりも抵抗率が高い高抵抗領域３０を形成することと、高抵抗領域３０が形成されたｐ型半導体基板１２を２００℃以上４００℃以下の温度で加熱することと、を備える。【選択図】図１