PRODUCTION METHOD OF SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a production method of a silicon single crystal capable of precisely producing a silicon single crystal having a desired resistivity while having a high resistivity of 1,000 Ωcm or higher.SOLUTION: A silicon single crystal of a high resistivity of 1,000 Ωcm or higher is produced by a CZ process. An input amount of a dopant is adjusted based on impurity concentration on a surface and in a bulk part of raw material polycrystal silicon. In advance, the difference between a resistivity of the produced silicon single crystal and a target resistivity is calculated and defined as a result affected by an environmental contamination amount. In the production method of the silicon single crystal, the input amount of the dopant is adjusted based on the impurity concentration on the surface and in the bulk part of the polycrystal silicon and the environmental contamination amount so as to cancel the environmental contamination amount.SELECTED DRAWING: Figure 1 【課題】１０００Ωｃｍ以上の高抵抗率のシリコン単結晶であっても、所望の抵抗率を有するシリコン単結晶を精度よく製造可能なシリコン単結晶の製造方法を提供する。【解決手段】ＣＺ法により１０００Ωｃｍ以上の高抵抗率のシリコン単結晶を製造する方法であって、予め原料となる多結晶シリコンの表面及びバルク部分の不純物濃度に基づいてドープ剤の投入量を調整して製造したシリコン単結晶の抵抗率と狙い抵抗率の差異を求め、この差異を環境汚染量の影響と定義し、次に前記多結晶シリコンの表面及びバルク部分の不純物濃度と前記環境汚染量に基づいて前記環境汚染量を相殺するように前記ドープ剤の投入量を調整してシリコン単結晶を製造することを特徴とするシリコン単結晶の製造方法。【選択図】図１