SILICON NITRIDE LAMINATE FILM, ORGANIC ELECTROLUMINESCENCE ELEMENT, ELECTRONIC PAPER, OPTICAL ADJUSTING FILM AND PRODUCTION METHOD OF SILICON NITRIDE LAMINATE FILM
PROBLEM TO BE SOLVED: To provide a silicon nitride laminate film having sufficient gas barrier property and small warpage.SOLUTION: The silicon nitride laminate film according to the present invention includes a flexible substrate and a single thin film layer or a plurality of thin film layers forme...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a silicon nitride laminate film having sufficient gas barrier property and small warpage.SOLUTION: The silicon nitride laminate film according to the present invention includes a flexible substrate and a single thin film layer or a plurality of thin film layers formed on at least one surface of the flexible substrate. At least one specific thin film layer in the single thin film layer or the plurality of thin film layers comprises silicon, nitrogen and hydrogen; and a hydrogen distribution curve showing the relationship between a position in the film thickness direction and the content of hydrogen atoms within the specific thin film layer has at least one maximum point and at least one minimum point.SELECTED DRAWING: Figure 3
【課題】本発明は、十分なガスバリア性を有しながら反りが小さい窒化珪素積層フィルムを提供することを課題とする。【解決手段】本発明に係る窒化珪素積層フィルムは、フレキシブル基材と、前記フレキシブル基材の少なくとも片方の表面に形成された1又は複数の薄膜層とを備える窒化珪素積層フィルムであって、前記1又は複数の薄膜層のうちの少なくとも1つの特定薄膜層が珪素、窒素及び水素を含有し、前記特定薄膜層内の膜厚方向位置と水素原子の含有量との関係を示す水素分布曲線が少なくとも1つの極大点及び少なくとも1つの極小点を有することを特徴とする。【選択図】図3 |
---|