ION IMPLANTATION METHOD AND ION IMPLANTER

PROBLEM TO BE SOLVED: To rapidly adjust the energy of an ion beam with high accuracy.SOLUTION: An ion implantation method comprises the steps of: measuring a beam energy of an ion beam output from a high-energy multistage linear acceleration unit which operates according to a tentative high frequenc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISHIKAWA MASAKI, MORIKAWA HIDEKI, KARIYA HIROYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES IRRADIATION DEVICES NUCLEAR ENGINEERING NUCLEAR PHYSICS PHYSICS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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