FINE STRUCTURE, AND FINE STRUCTURE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a fine structure that has a fine convex part high in aspect ratio highly accurately formed, can suppress reflection of incidence light from the outside, and can prevent even reflection of light inside the fine structure such as an interface between a base material an...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a fine structure that has a fine convex part high in aspect ratio highly accurately formed, can suppress reflection of incidence light from the outside, and can prevent even reflection of light inside the fine structure such as an interface between a base material and a layer provided one the base material, and the like, and to provide a fine structure manufacturing method.SOLUTION: An anti-reflection structure 1 has: a base material 10; an intermediate layer 11 which is formed in at least one part on the base material 10, and of which a composition continuously varies in a thickness direction of a layer; and a homogeneous layer 12 which is formed on the intermediate layer 11, and of which a composition is even, in which in a surface on a homogeneous layer 12 side, fine concavity and convexity of a pitch less than a wavelength of visible light is formed. A face 11a on a homogeneous layer 12 side of the intermediate layer 11, and the homogenous layer 12 are formed of, for example, a silicon nitride, and a face 11b on a base material 10 side of the intermediate layer 11 is formed of a silicon oxynitride. Further, at least one of a nitrogen ratio to silicon and an oxygen ratio to the silicon is continuously changed in the thickness direction of the layer, which in turn continuously changes the composition of the intermediate layer 11.SELECTED DRAWING: Figure 1
【課題】アスペクト比の高い微細な凸部が精度よく形成され、外部からの入射光の反射を充分に抑制でき、かつ、基材とその上に設けられた層との界面等の、当該微細構造体の内部での光の反射も防止できる微細構造体とその製造方法の提供。【解決手段】基材10と、該基材10上の少なくとも一部に形成され、層の厚み方向に組成が連続的に変化する中間層11と、該中間層11上に形成された組成一定の均質層12とを有し、均質層12側の表面に、可視光の波長以下のピッチの微細凹凸が形成された反射防止構造体1。中間層11の均質層12側の面11aと、均質層12とを例えばケイ素の窒化物から形成し、中間層11の基材10側の面11bをケイ素の酸窒化物とする。また、ケイ素に対する窒素比および酸素比の少なくとも一方を層の厚み方向に連続的に変化させることにより、中間層11の組成を連続的に変化させる。【選択図】図1 |
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