SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can minimize parasitic capacitance of an element arranged between an input/output terminal and a ground for inhibiting decrease in a transmission rate of a signal.SOLUTION: A semiconductor device manufacturing method...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MOURAGUCHI AKIO, HIRANO DAISUKE, KUBOTA HARUKA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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