CRYSTAL GROWTH APPARATUS AND CRYSTAL GROWTH METHOD

PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and crystal growth method, capable of corresponding to the growth of a long-sized crystal at a low cost without generating defects, such as cracks when manufacturing an oxide single crystal, such as lithium tantalate.SOLUTION: A crystal gro...

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Hauptverfasser: TERAJIMA AKIRA, KOCHIYA TOSHIO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a crystal growth apparatus and crystal growth method, capable of corresponding to the growth of a long-sized crystal at a low cost without generating defects, such as cracks when manufacturing an oxide single crystal, such as lithium tantalate.SOLUTION: A crystal growth apparatus comprises: a metal crucible 10 capable of holding a raw material melt 150; a heating induction coil 80 including a cylindrical metal after-heater 40 arranged above the crucible 10, a lower coil part 81 arranged around the crucible 10 and wound at a first winding pitch, an upper coil part 82 separated from the lower coil part 81 to be arranged above and wound at a second winding pitch and a rough wound coil part 83 connecting the upper coil part 82 and the lower coil part 81, having at least a part arranged around the after-heater 40 and wound at a third winding pitch larger than the first and second winding pitches; and an elevating mechanism linked to the pulling of a single crystal to elevate the induction coil 80. The crystal manufacturing method uses the crystal growth apparatus.SELECTED DRAWING: Figure 1 【課題】タンタル酸リチウム等の酸化物単結晶の製造において、低コストでクラック等の不具合の発生がなく、結晶育成長さの長尺化に対応できる結晶育成装置及び結晶育成方法の提供。【解決手段】原料融液150を保持可能な金属製のルツボ10と、ルツボ10の上方に配置された金属性円筒状のアフター・ヒーター40と、ルツボ10の周囲に配置され、第1の巻ピッチで巻回された下部コイル部81と、下部コイル部81と離間して上方に配置され、第2の巻ピッチで巻回された上部コイル部82と、上部コイル部82と下部コイル部81とを接続するとともに、少なくとも一部がアフター・ヒーター40の周囲に配置され、第1及び第2の巻ピッチよりも大きい第3の巻ピッチで巻回された粗巻コイル部83と、を有する加熱用の誘導コイル80と、単結晶引き上げに連動して誘導コイル80を上下動させる昇降機構と、を有する結晶育成装置及び結晶製造方法。【選択図】図1