HEATER INSULATION STRUCTURE, AND SINGLE CRYSTAL PRODUCTION APPARATUS

PROBLEM TO BE SOLVED: To provide a heater insulation structure capable of realizing the power saving by suppressing the heat release of a heater even a crucible diameter is enlarged, and improving a crystal quality, in manufacturing sapphire single crystal by an EFG method, and a sapphire single cry...

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Bibliographische Detailangaben
Hauptverfasser:	HIGUCHI KAZUTO, FURUTAKI TOSHIRO, YAGUCHI YOICHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a heater insulation structure capable of realizing the power saving by suppressing the heat release of a heater even a crucible diameter is enlarged, and improving a crystal quality, in manufacturing sapphire single crystal by an EFG method, and a sapphire single crystal production apparatus equipped with that heater insulation structure.SOLUTION: A heater insulation structure 1 comprises at least: a crucible 2 for accommodating a material for manufacturing a single crystal; a heater 3 arranged on the outer circumference side of the crucible 2; a side surface part insulation member 4 arranged to enclose the outer peripheral surface of the heater 3; and a heater shield 5 covering the entirety of a heater top face part 6, and a single crystal manufacturing apparatus is equipped with the heater insulation structure 1.SELECTED DRAWING: Figure 1 【課題】ＥＦＧ法によるサファイア単結晶の製造において、坩堝径が大型化してもヒータの放熱を抑えることで省電力を実現し、結晶品質を向上できるヒータ断熱構造体とこのヒータ断熱構造体を備えたサファイア単結晶製造装置を提供すること。【解決手段】単結晶製造用の原料を収容する坩堝２と、坩堝２の外周面側に配置されたヒータ３と、ヒータ３の外周面側を取り囲むように配置された側面部断熱部材４と、ヒータ上面部６全体を覆うヒータシールド５を少なくとも有するヒータ断熱構造体１およびヒータ断熱構造体１を備えた単結晶製造装置。【選択図】図１