SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To inhibit generation of burrs of a shield material on an outer edge of a semiconductor device when forming an electromagnetic shield on a surface of the semiconductor device.SOLUTION: A semiconductor device comprises a substrate, a semiconductor chip arranged on a first surfac...

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Bibliographische Detailangaben
Hauptverfasser: KITAZAKI KENZO, MUGITANI HIDEJI, SHIMAMURA MASAYA
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To inhibit generation of burrs of a shield material on an outer edge of a semiconductor device when forming an electromagnetic shield on a surface of the semiconductor device.SOLUTION: A semiconductor device comprises a substrate, a semiconductor chip arranged on a first surface of the substrate, an encapsulation material provided on the first surface of the substrate so as to cover the semiconductor chip, and a conductive film provided from a top face of the encapsulation material and a lateral face of the encapsulation material to a lateral face of the substrate, in which the conductive film becomes thinner with the increasing distance from the encapsulation material side toward the substrate side.SELECTED DRAWING: Figure 3 【課題】 電磁シールドを半導体装置の表面に形成する際に、半導体装置の外縁にシールド材料のバリが発生することを抑制する。【解決手段】 半導体装置は、基板と、前記基板の第1面に配置される半導体チップと、前記半導体チップを覆うように前記基板の前記第1面に設けられた封止材と、前記封止材の上面および前記封止材の側面から前記基板の側面に亘り設けられた導電膜と、を備え、前記導電膜は、前記封止材の側から前記基板の側へ向かうにつれて薄くなる。【選択図】図3