HETEROACENE DERIVATIVE, ORGANIC SEMICONDUCTOR LAYER, AND ORGANIC THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a novel heteroacene derivative being a coating type organic semiconductor material with high carrier mobility, high solubility and high oxidation resistance; and an organic semiconductor layer and an organic thin film transistor that employ the same.SOLUTION: Provide...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HACHIYA SEIJI, TANABIKI MASAO, WATANABE MASATO, MIYASHITA MASATO
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a novel heteroacene derivative being a coating type organic semiconductor material with high carrier mobility, high solubility and high oxidation resistance; and an organic semiconductor layer and an organic thin film transistor that employ the same.SOLUTION: Provided is a heteroacene derivative represented by the general formula (1) in the figure. (In the formula, substituents R-Reach independently represent hydrogen, halogen, a C4-20 alkyl group, a C1-20 acyl group, C4-20 aryl group, C2-20 alkenyl group, or C2-20 alkynyl group; and Tand Teach independently represent a sulfur atom, an oxygen atom, or a selenium atom.)SELECTED DRAWING: None 【課題】 高いキャリア移動度、高溶解性及び高耐酸化性を持つ塗布型の有機半導体材料である新規なヘテロアセン誘導体、これを用いた有機半導体層及び有機薄膜トランジスタを提供する。【解決手段】 下記一般式(1)で示されるヘテロアセン誘導体。【化1】(ここで、置換基R1〜R9は、それぞれ独立して、水素、ハロゲン、炭素数4〜20のアルキル基、炭素数1〜20のアシル基、炭素数4〜20のアリール基、炭素数2〜20のアルケニル基、又は炭素数2〜20のアルキニル基を示す。T1及びT2は、それぞれ独立して硫黄原子、酸素原子、又はセレン原子を示す。)【選択図】 なし