GAS INJECTOR AND FILM FORMING APPARATUS FOR SEMICONDUCTOR PROCESS

PROBLEM TO BE SOLVED: To improve a flow rate of a process gas while avoiding a reflux problem by improving a configuration of a gas injector.SOLUTION: The gas injector for a semiconductor process includes: a plurality of gas inlets for introducing a plurality of gases; a plurality of gas outlets for...

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Bibliographische Detailangaben
1. Verfasser:	SHIEH SHIH-YUNG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve a flow rate of a process gas while avoiding a reflux problem by improving a configuration of a gas injector.SOLUTION: The gas injector for a semiconductor process includes: a plurality of gas inlets for introducing a plurality of gases; a plurality of gas outlets for injecting the plurality of gases outside; and a plurality of gas flow paths respectively connected to the plurality of gas inlets and the plurality of gas outlets and transmitting the plurality of gases to corresponding gas outlets. A part of a sectional area of at least one of the plurality of gas flow paths gradually changes with respect to the gas outlet.SELECTED DRAWING: Figure 2 【課題】ガス噴射器の構成を改良することによって、プロセス用ガスの流速を向上しつつ、還流問題が生じることを回避する。【解決手段】複数のガスを導入する複数のガス入口と、外に前記複数のガスを噴射する複数のガス出口と、前記複数のガス入口と前記複数のガス出口に夫々接続し、前記複数のガスを対応の前記ガス出口に伝送する複数のガス流路と、を含み、前記複数のガス流路の少なくとも一つの断面積の一部は、前記ガス出口に対して次第に変化することを特徴とする半導体プロセス用のガス噴射器を提供する。【選択図】図２