SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a substrate processing method which can suppress the worsening of an etching rate of a metal film formed on an organic film.SOLUTION: When plasma etching a substrate S having a metal film 30 formed on an organic insulation film 26, a bias voltage for drawing cations...

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Bibliographische Detailangaben
1. Verfasser:	KOBE TAKASHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate processing method which can suppress the worsening of an etching rate of a metal film formed on an organic film.SOLUTION: When plasma etching a substrate S having a metal film 30 formed on an organic insulation film 26, a bias voltage for drawing cations 34 into plasma in a pulse form is applied to the substrate S.SELECTED DRAWING: Figure 4 【課題】有機膜上に形成されたメタル膜のエッチングレートが低下するのを抑制することができる基板処理方法を提供する。【解決手段】有機絶縁膜２６の上に形成されたメタル膜３０を有する基板Ｓにプラズマを用いたエッチングを施す際、基板Ｓにプラズマにおける陽イオン３４を引きこむためのバイアス電圧をパルス印加する。【選択図】図４