GAS SUPPLY DEVICE AND GAS SUPPLY METHOD

PROBLEM TO BE SOLVED: To prevent increase of a flow rate of a raw material gas necessary for film deposition, and to increase a flow rate of a substitution gas to substitute the atmosphere in a processing vessel 11.SOLUTION: A gas supply device is provided that comprises: a raw material gas flow passage 41 and a reactant gas flow passage 61 for supplying a raw material gas and a reactant gas respectively to a processing vessel 11; a first carrier gas flow passage 51 and a second carrier gas flow passage 71 connected to the raw material gas flow passage 41 and the reactant gas flow passage 61 respectively; substitution gas flow passages 45, 65 for supplying a substitution gas to the processing vessel 11 through a supply controller different from a carrier gas supply controller provided in the first carrier gas flow passage 51 and the second carrier gas flow passage 71; carrier gas storage parts 46, 66 for storing the substitution gas provided in the substitution gas flow passages 45, 65 respectively; valves V2, V6 respectively provided downstream of the gas storage parts 46, 66 in the substitution gas flow passages 45, 65; and a control unit 100 for controlling the valves V2, V6.SELECTED DRAWING: Figure 1 【課題】成膜に必要な原料ガスの流量が大きくなることを防ぐと共に、処理容器１１内の雰囲気を置換する置換ガスの流量を大きくすること。【解決手段】原料ガス、反応ガスを夫々処理容器１１内に供給するための原料ガス流路４１、反応ガス流路６１と、原料ガス流路４１及び反応ガス流路６１に夫々接続される第１のキャリアガス流路５１及び第２のキャリアガス流路７１と、第１のキャリアガス流路５１及び第２のキャリアガス流路７１に設けられたキャリアガスの供給制御機器とは別個の供給制御機器を介して置換ガスを処理容器１１内に供給する置換ガス流路４５、６５と、置換ガス流路４５、６５に設けられ、置換ガスを貯留するガス貯留部４６、６６と、置換ガス流路４５、６５においてガス貯留部４６、６６の下流側に設けられるバルブＶ２、Ｖ６と、バルブＶ２、Ｖ６の開閉を制御する制御部１００と、を備えるようにガス供給装置を構成する。【選択図】図１