PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM

PROBLEM TO BE SOLVED: To provide a method of depositing a high conformal dielectric film.SOLUTION: A method of depositing a film on a substrate surface includes surface mediated reaction in which a film is grown through one or more cycles of reactant adsorption and reaction. The method intermittentl...

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Bibliographische Detailangaben
Hauptverfasser:	ANDREW J MCKERROW, VISHWANATHAN RANGARAJAN, DENNIS M HAUSMANN, PRAMOD SUBRAMONIUM, MANDYAM SRIRAM, BART J VAN SCHRAVENDIJK, HENRI JON, SHANKAR SWAMINATHAN, KIRTHI K KATTIGE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of depositing a high conformal dielectric film.SOLUTION: A method of depositing a film on a substrate surface includes surface mediated reaction in which a film is grown through one or more cycles of reactant adsorption and reaction. The method intermittently delivers dopant species to the film between the cycles of adsorption and reaction.SELECTED DRAWING: Figure 17 【課題】高コンフォーマル誘電体膜を堆積する方法を提供する。【解決手段】膜を基板表面に堆積するための方法は、膜を１又は複数サイクルの反応物の吸着及び反応を通して成長させる、表面で起こる反応（ｓｕｒｆａｃｅｍｅｄｉａｔｅｄｒｅａｃｔｉｏｎ）を含む。方法は、吸着及び反応のサイクル間に、ドーパント種を膜に間欠的に供給する。【選択図】図１７