FILM DEPOSITION METHOD

PROBLEM TO BE SOLVED: To provide a film deposition method capable of efficiently depositing an aluminum oxide film having a stress within a specified range, while keeping a predetermined film deposition rate.SOLUTION: A material S on which a film is deposited is arranged oppositely to targets 2,2mad...

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Hauptverfasser: MIZUNO YUSUKE, OKUBO HIROO, KOBAYASI HIROSHI, ISOBE TATSUNORI, NAGATA JUNICHI, ARAI MAKOTO, MIZUNO TAIHEI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a film deposition method capable of efficiently depositing an aluminum oxide film having a stress within a specified range, while keeping a predetermined film deposition rate.SOLUTION: A material S on which a film is deposited is arranged oppositely to targets 2,2made of aluminum in a vacuum chamber 1. A rare gas and oxygen gas are introduced into the vacuum chamber under a vacuum atmosphere. Specified electric power is applied to the targets to subject the targets to sputtering and thus a reaction product of an aluminum atom and oxygen is stuck to and deposited on the surface of the material on which a film is deposited to form an aluminum oxide film. At the same time, steam having a partial pressure in the range of 1×10Pa-0.1 Pa is introduced into the vacuum chamber.SELECTED DRAWING: Figure 1 【課題】所定の成膜レートを維持したまま、応力が所定値以内の酸化アルミニウム膜を効率よく成膜することができる成膜方法を提供する。【解決手段】本発明では、真空チャンバ1内に被成膜物Sと、アルミニウム製のターゲット21,22とを対向配置し、真空雰囲気中の真空チャンバ内に希ガス及び酸素ガスを導入し、ターゲットに所定電力を投入してターゲットをスパッタリングしてアルミニウム原子と酸素との反応生成物を被成膜物の表面に付着、堆積させて酸化アルミニウム膜を成膜する。その際、真空チャンバ内に水蒸気を導入する。水蒸気の分圧は1×10−3Pa〜0.1Paの範囲にする。【選択図】図1