ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide an active matrix substrate capable of achieving high definition and enhancement of a yield and a display device.SOLUTION: An active matrix substrate includes: a substrate; an oxide semiconductor layer which is formed on the substrate and contains a first region as a channel region; gate electrodes arranged in the first region of the oxide semiconductor layer so as to face each other with a first insulating film therebetween; a thin film transistor having a source/drain electrode electrically connected to the oxide semiconductor layer; an electrode layer which is on the same layer as the gate electrode and is provided in a region different from that of the thin film transistor; and a second insulating film which is provided between the substrate and the electrode layer and has a second end positioned retracted from the first end of the electrode layer. The oxide semiconductor layer contains a second region having a resistance lower than that of the first region, and the electrode layer is electrically connected to the second region of the oxide semiconductor layer at the first end.SELECTED DRAWING: Figure 3 【課題】高精細化および歩留まりの向上を実現することが可能なアクティブマトリクス基板および表示装置を提供する。【解決手段】このアクティブマトリクス基板は、基板と、基板上に形成されると共に、チャネル領域としての第１領域を含む酸化物半導体層と、酸化物半導体層の第１領域に第１の絶縁膜を介して対向配置されたゲート電極と、酸化物半導体層に電気的に接続されたソース・ドレイン電極とを有する薄膜トランジスタと、ゲート電極と同層であって薄膜トランジスタとは異なる領域に設けられた電極層と、基板と電極層との間に設けられ、電極層の第１の端部よりも後退した位置に第２の端部を有する第２の絶縁膜とを備える。酸化物半導体層は、第１領域よりも低抵抗な第２領域を含み、電極層は、第１の端部において、酸化物半導体層の第２領域に電気的に接続される。【選択図】図３