SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variations in transistor performance.SOLUTION: A semiconductor device (100) includes a drift region overlapping with second gate electrodes (9b, 9c, 10b, 10c), third gate electrodes (9d, 9e, 10d, 10e) and fourth gate elec...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variations in transistor performance.SOLUTION: A semiconductor device (100) includes a drift region overlapping with second gate electrodes (9b, 9c, 10b, 10c), third gate electrodes (9d, 9e, 10d, 10e) and fourth gate electrodes (9f, 10f) via a gate oxide film (6) in a region from between a first gate electrode (9a) and the second gate electrodes (9b, 9c, 10b, 10c) to a source/drain region.SELECTED DRAWING: Figure 1
【課題】トランジスタの性能のばらつきを抑制すること。【解決手段】半導体装置（１００）は、第１ゲート電極（９ａ）及び第２ゲート電極（９ｂ，９ｃ，１０ｂ，１０ｃ）の間からソース・ドレイン領域までの領域において、第２ゲート電極（９ｂ，９ｃ，１０ｂ，１０ｃ）、第３ゲート電極（９ｄ，９ｅ，１０ｄ，１０ｅ）及び第４ゲート電極（９ｆ，１０ｆ）とゲート酸化膜（６）を介して重なるドリフト領域を備える。【選択図】図１ |
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