ETCHANT AND ETCHING METHOD

PROBLEM TO BE SOLVED: To provide an etchant to be used to etch a copper film or copper alloy film of a metal film having the copper film or copper alloy film while using a dry film resist as a mask, which is less in amount of side etching and high in etching rate, and which enables the selective etc...

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Bibliographische Detailangaben
1. Verfasser:	NISHIJIMA YOSHITAKA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an etchant to be used to etch a copper film or copper alloy film of a metal film having the copper film or copper alloy film while using a dry film resist as a mask, which is less in amount of side etching and high in etching rate, and which enables the selective etching of the copper film or copper alloy film.SOLUTION: An etchant to be used to etch a copper film or copper alloy film of a metal film having the copper film or copper alloy film while using a dry film resist as a mask comprises (A) a copper ion source, (B) an inorganic acid, (C) triethanol amine, and (D) azole. The etchant is 0.1-1.3 wt.% in copper ion content and less than pH 5.0.SELECTED DRAWING: None 【課題】ドライフィルムレジストをマスクとして使用し、銅膜又は銅合金膜を有する金属膜の銅膜又は銅合金膜をエッチングするために用いられるエッチング液であって、サイドエッチング量が少なく、エッチングレートが高く、かつ、銅膜又は銅合金膜を選択的にエッチングすることが可能なエッチング液を提供すること。【解決手段】ドライフィルムレジストをマスクとして使用し、銅膜又は銅合金膜を有する金属膜の銅膜又は銅合金膜をエッチングするために用いられるエッチング液であって、（Ａ）銅イオン源、（Ｂ）無機酸、（Ｃ）トリエタノールアミン、及び、（Ｄ）アゾールを含有し、銅イオンの含有量が０．１〜１．３重量％であり、ｐＨが５．０未満であることを特徴とするエッチング液。【選択図】なし